Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics

نویسندگان

  • Yu.Yu. Illarionov
  • M. I. Vexler
  • V. V. Fedorov
  • S. M. Suturin
  • N. S. Sokolov
  • T. Grasser
چکیده

A detailed characterization of injection properties of epitaxial tunnel-thin calcium fluoride layers is performed. Electrical and optical behavior of Au/CaF2/Si capacitors is examined. The results allow for claiming that attained quality of the CaF2 films is adequate for application as a barrier layer in microelectronics.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optical properties of silicon nano layers by using Kramers- Kronig method

Silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. The layers are produced with electron gun evaporation method under ultra-high vacuum condition. The optical Reectance and the Transmittance of produced layers were measured by using spectrophotometer. The optical functions such as, real and imaginary part of refractive index, real and imaginar...

متن کامل

Field - and Photoassisted Field Emission Studies of Calcium Fluoride Coated Silicon Tips

Measurements of field emission current-voltage and Fowler-Nordheim characteristics of Si tips covered by 100 nm-thick Ca& epitaxial layers have been for the first time performed. It was found that in spite of dielectric nature of the coating, the tips demonstrate high emissivity comparable with the diamond coated tips. Results of high resolution photoassisted field emission investigations of C ...

متن کامل

Single Atom Electron Emission from the Silicon Tip Coated by Calcium Fluoride with Samarium Dopant Ions

We present the first experimental results of the studying of field electron emission from sharp silicon tips covered by thin dielectric CaF2 layers containing Sm dopant ions. Some indications on the resonant tunneling of electrons from sharp silicon tip through dopant samarium ions inside the coating have been observed, which can be regarded as an implementation of one-atom electron source of a...

متن کامل

Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications

In this study, we present selected reliability issues of double gate dielectric stacks for non-volatile semiconductor memory (NVSM) applications. Fabricated gate structures were consisted of PECVD silicon oxynitride layer (SiOxNy) as the pedestal layer and hafnium dioxide layer (HfO2) as the top gate dielectric. In the course of this work, obtained MIS structures were investigated by means of c...

متن کامل

Deconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method

The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015